2sj280(l), 2sj280(s) silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 3 2 1 4 3 2 1 4 d g s
ldpak 1. gate
2. drain
3. source
4. drain
2sj280(l), 2sj280(s) 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C60 v gate to source voltage v gss 20 v drain current i d C30 a drain peak current i d(pulse) * 1 C120 a body to drain diode reverse drain current i dr C30 a avalanche current i ap * 3 C30 a avalanche energy e ar * 3 77 mj channel dissipation pch* 2 75 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. value at t c = 25c 3. value at tch = 25c, rg 3 50 w
2sj280(l), 2sj280(s) 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C60 v i d = C10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 200 a, v ds = 0 gate to source leak current i gss 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss C250 a v ds = C50 v, v gs = 0 gate to source cutoff voltage v gs(off) C1.0 C2.25 v i d = C1 ma, v ds = C10 v static drain to source on state resistance r ds(on) 0.033 0.043 w i d = C15 a, v gs = C10 v* 1 0.045 0.06 w i d = C15 a, v gs = C4 v* 1 forward transfer admittance |y fs | 1725 s i d = C15 a, v ds = C10 v* 1 input capacitance ciss 3300 pf v ds = C10 v, v gs = 0, f = 1 mhz output capacitance coss 1500 pf reverse transfer capacitance crss 480 pf turn-on delay time t d(on) 30nsi d = C15 a, v gs = C10 v, r l = 2 w rise time t r 170 ns turn-off delay time t d(off) 500 ns fall time t f 390 ns body to drain diode forward voltage v df C1.5v i f = C30 a, v gs = 0 body to drain diode reverse recovery time t rr 200 ns i f = C30 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj280(l), 2sj280(s) 4 case temperature tc (?) power vs. temperature derating channel dissipation pch (w) 0 25 50 75 50 100 150 maximum safe operation area ?00 ?00 ?00 ?0 ?0 ? ? ?.5 ?.1 ?.3 ? ? ?0 ?0 ?00 drain to source voltage v (v) drain current i (a) d ds operation in this area
is limited by r ds(on) 1 ms 10 s m 100 s m pw = 10 ms dc operation (tc = 25?) ta = 25? ? typical output characteristics ?0 ?0 ?0 ?0 ?0 0 0 4 6 8 ?0 drain to source voltage v (v) drain current i (a) d ds ? v ?.5 v ? v ?.5 v v = ? v ?0 v ? v gs typical transfer characteristics ?0 ?0 ?0 ?0 ?0 0 ? ? ? ? ? gate to source voltage v (v) drain current i (a) d gs tc = 25? 75? pulse test
v = ?0 v gs ?5?
2sj280(l), 2sj280(s) 5 drain-source saturation voltage
vs. gate-source voltage 0 2 4 6 8 10 ?.4 ?.8 ?.2 ?.6 ?.0 gate to source voltage v (v) drain to source saturation voltage
v (v) gs ds (on) pulse test ?0 a ?0 a i = ?0 a d static drain-source on state
resistance vs. drain current ? ? ?0 ?0 ?0 ?00 ?00 0.005 0.01 0.02 0.05 0.1 0.2 0.5 drain current i (a) static drain-source on state
resistance r ( ) ds(on) d w ?0 v v = ? v gs static drain-source on state
resistance vs. temperature case temperature t (?) c static drain-source on state
resistance r ( ) ds(on) w 0.1 0.08 0.06 0.04 0.02 ?0 0 40 80 120 160 pulse test ?0 v i = ?0 a d v = ? v gs i = ?0 a d ?0 a, ?0 a ?0 a, ?0 a 0
2sj280(l), 2sj280(s) 6 forward transfer admittance
vs. drain current 100 50 20 10 5 2 1 ?.5 ? ? ? ?0 ?0 ?0 drain current i (a) d forward transfer admittance
|y | (s) fs tc = 25? ?5? pulse test
v = ?0 v ds 75? body-drain diode reverse
recovery time reverse drain current i (a) dr reverse recovery time t (ns) rr ? ? ? ?0 ?0 ?0 ?00 5 10 20 50 100 200 500 di/dt = 50 a/ s, v = 0
ta = 25? m gs typical capacitance
vs. drain-source voltage 10000 1000 100 10 0 ?0 ?0 ?0 ?0 ?0 drain to source voltage v (v) ds capacitance c (pf) ciss coss crss v = 0,
f = 1 mhz gs
2sj280(l), 2sj280(s) 7 dynamic input characteristics 0 ?0 ?0 ?0 ?0 ?00 0 40 80 120 160 200 0 ? ? ?2 ?6 ?0 gate charge qg (nc) drain to source voltage v (v) ds v = ?0 v
?5 v
?0 v dd ?5 v
?0 v v = ?0 v
dd v i = ?0 a ds d gate to source voltage v (v) gs v gs switching characteristics drain current i (a) d ?.5 ? ? ? ?0 ?0 ?0 10 20 50 100 200 500 1000 switching time t (ns) t t (off) gs m dd t (on) t <
= = : v = ?0 v, v ?0 v
pw = 2 s, duty 1% d d f r reverse drain current vs.
source to drain voltage ?0 ?0 ?0 ?0 ?0 0 0 ?.4 ?.8 ?.2 ?.6 ?.0 source to drain voltage v (v) sd reverse drain current i (a) dr pulse test ? v 0, 5v v = ?0 v gs channel temperature tch (?) repetive avaranche energy e (mj) ar i = ?0 a
v = ?5 v
duty < 0.1%
rg 50 dd w ap >
= maxmum avalanche energy vs.
channel temperature derating 100 80 60 40 20 0 25 50 75 100 125 150
2sj280(l), 2sj280(s) 8 v
monitor ds i
monitor ap v dd rg vin
?5 v 50 d.u.t v dd 0 i d i ap v ds v
(br)dss v dss ?v dd v dss e = ar 2 1 ?l ?i ap 2 l w avalanche test circuit and waveform 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 d = 1 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m t c = 25? 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse normalized transient thermal impedance vs. pulse width t pw p dm d = t pw q ch? (t) = g s (t) ? q ch?
q ch? = 1.67?/w, t c = 25? switching time test circuit vin monitor vin ?0 v 50 w d.u.t vout monitor r l v dd 30 v = . . waveforms vin vout t d (on) 10% t r t f 10% 90% 90% 10% 90% t d (off)
2sj280(l), 2sj280(s) 9 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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